ALD metal-gate/high-κ gate stack for Si and Si0.7Ge0.3 surface-channel pMOSFETs
نویسندگان
چکیده
ALD high-κ dielectrics and TiN metal-gate were successfully incorporated in both Si and Si0.7Ge0.3 surface-channel pMOSFETs. The high-κ gate dielectrics used included Al2O3 /HfAlOx /Al2O3, Al2O3 /HfO2 /Al2O3 and Al2O3. The Si transistors with Al2O3 /HfAlOx /Al2O3 showed a sub-threshold slope of 75 mV/dec. and a density of interface states of 3×10 cmeV. No obvious degradation of the Si channel hole mobility was observed. The Si0.7Ge0.3 pMOSFETs with the various high-κ gate dielectrics demonstrated enhanced transconductance, drive current and channel hole mobility compared with the Si reference.
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